Characterization study of multifunctional thin films and electronic devices
In this project, ferromagnetic material SrRuO3 (SRO) and ferroelectric material BaTiO3 (BTO) were grown alternatively on SrTiO3 (STO) substrate in structure of 001 plane single crystal doped with material Nb as superconductor. Taking advantages of laser Molecular Beam Epitaxy (MBE) technique to grow...
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| Format: | Final Year Project |
| Language: | English |
| Published: |
2010
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| Online Access: | http://hdl.handle.net/10356/20781 |
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| Institution: | Nanyang Technological University |
| Language: | English |
| Summary: | In this project, ferromagnetic material SrRuO3 (SRO) and ferroelectric material BaTiO3 (BTO) were grown alternatively on SrTiO3 (STO) substrate in structure of 001 plane single crystal doped with material Nb as superconductor. Taking advantages of laser Molecular Beam Epitaxy (MBE) technique to grow layer by layer. In order to study the characterization on the thin film in application Ferroelectric Random Access Memory (FeRAM), ferroelectric capacitor was designed and simulated by using assistant CAD tool (L-Edit). Through the process fabrications of photolithography, patterning and deposition to create the thin film device in the clean room. Therefore, the capacitance characterization on ferroelectric material BTO was researched, as well as determinate the resistivity characterization between on SRO and BTO layer. Those physical properties will be coherent with research project in further. |
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