Investigation of silicon nanowires photodetector

Silicon nanowires (SiNWs) research has intensified over the past decade with the advancement in nanowires fabrication technology. The objectives of this study are to (i) develop a fabrication process to obtain top-down SiNWs with cross-sectional dimensions of 10 nm or less, (ii) characterize the phy...

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Main Author: Foo, Kai Lin.
Other Authors: Rusli
Format: Theses and Dissertations
Language:English
Published: 2010
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Online Access:http://hdl.handle.net/10356/21197
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-211972023-07-04T16:16:36Z Investigation of silicon nanowires photodetector Foo, Kai Lin. Rusli School of Electrical and Electronic Engineering Yu Mingbin DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics Silicon nanowires (SiNWs) research has intensified over the past decade with the advancement in nanowires fabrication technology. The objectives of this study are to (i) develop a fabrication process to obtain top-down SiNWs with cross-sectional dimensions of 10 nm or less, (ii) characterize the physical structures of the SiNWs, (iii) form SiNWs p+-n+ and p+-p-n+ diodes along the nanowires and (iv) characterize the SiNWs diodes under dark and illuminated conditions to gain an understanding of the nanoscale junction devices. The diodes fabricated consist of multiple SiNWs of 1 μm long connected in parallel, as well as larger dimension bulk diodes that are served as control diodes. Three different batches of diodes were fabricated. Batch 0 samples demonstrated the successful fabrication of SiNWs p+-p-n+ diodes. The subsequent fabrication was to examine the formation of the nanowires and to improve the electrical characteristics of the SiNWs diodes. The silicon fin width and oxidation time were reduced in batch 1 samples fabrication. Silicon oxide was deposited on the SiNWs as passivation, to replace the thermal oxide that was removed for the purpose of inspection. The last round of fabrication was to reduce the high leakage current observed in batch 1 diodes. The batch 2 samples have either deposited or thermal oxides as passivation for the SiNWs. The dopant activation time was reduced from 20 s to 5 s in batch 2 samples. Master of Engineering 2010-03-22T07:52:13Z 2010-03-22T07:52:13Z 2010 2010 Thesis http://hdl.handle.net/10356/21197 en 117 p. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
Foo, Kai Lin.
Investigation of silicon nanowires photodetector
description Silicon nanowires (SiNWs) research has intensified over the past decade with the advancement in nanowires fabrication technology. The objectives of this study are to (i) develop a fabrication process to obtain top-down SiNWs with cross-sectional dimensions of 10 nm or less, (ii) characterize the physical structures of the SiNWs, (iii) form SiNWs p+-n+ and p+-p-n+ diodes along the nanowires and (iv) characterize the SiNWs diodes under dark and illuminated conditions to gain an understanding of the nanoscale junction devices. The diodes fabricated consist of multiple SiNWs of 1 μm long connected in parallel, as well as larger dimension bulk diodes that are served as control diodes. Three different batches of diodes were fabricated. Batch 0 samples demonstrated the successful fabrication of SiNWs p+-p-n+ diodes. The subsequent fabrication was to examine the formation of the nanowires and to improve the electrical characteristics of the SiNWs diodes. The silicon fin width and oxidation time were reduced in batch 1 samples fabrication. Silicon oxide was deposited on the SiNWs as passivation, to replace the thermal oxide that was removed for the purpose of inspection. The last round of fabrication was to reduce the high leakage current observed in batch 1 diodes. The batch 2 samples have either deposited or thermal oxides as passivation for the SiNWs. The dopant activation time was reduced from 20 s to 5 s in batch 2 samples.
author2 Rusli
author_facet Rusli
Foo, Kai Lin.
format Theses and Dissertations
author Foo, Kai Lin.
author_sort Foo, Kai Lin.
title Investigation of silicon nanowires photodetector
title_short Investigation of silicon nanowires photodetector
title_full Investigation of silicon nanowires photodetector
title_fullStr Investigation of silicon nanowires photodetector
title_full_unstemmed Investigation of silicon nanowires photodetector
title_sort investigation of silicon nanowires photodetector
publishDate 2010
url http://hdl.handle.net/10356/21197
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