Design, modeling and characterization of on-chip transformer for silicon RFIC
On-chip inductors play a crucial role in radio frequency integrated circuits (RFICs). For gigahertz circuitry, these components are usually realized using bond-wires or planar metal traces that route in the spiral or symmetrical configuration. In recent years, demand for multiple inductors in each R...
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Format: | Theses and Dissertations |
Language: | English |
Published: |
2010
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Online Access: | https://hdl.handle.net/10356/21198 |
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Institution: | Nanyang Technological University |
Language: | English |
Summary: | On-chip inductors play a crucial role in radio frequency integrated circuits (RFICs). For gigahertz circuitry, these components are usually realized using bond-wires or planar metal traces that route in the spiral or symmetrical configuration. In recent years, demand for multiple inductors in each RFIC application has driven the development of on-chip transformers. In fact, the physical isolation property of the transformers has already facilitated the integration of many large functional blocks (impedance matching, low-noise feedback, differential-to-single-ended conversion) into the silicon wafer. Furthermore, they permit a large range of inductances to be realized. However, these transformers possess a drawback of smaller quality-factor (Q) values with various loss mechanisms and are more difficult to model. |
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