Characterisation of ion implantation for sub-0.25 micron device manufacturing
Damage generated by ion implantation have a strong influence on the performance of the silicon substrate and photoresist. This damage was characterised. For photoresist, the damage results in extensive bond breaking of the polymer chain and subsequent release of H2 gas and some volatile hydrogen fra...
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| 格式: | Theses and Dissertations |
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2008
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| 在線閱讀: | http://hdl.handle.net/10356/2415 |
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