Development of high power semiconductor laser diode technology based on solid source molecular beam epitaxy

• Main Author: Yoon, Soon Fatt.
• Other Authors: School of Electrical and Electronic Engineering
• Format: Research Report
• Published: 2008
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
• Online Access: http://hdl.handle.net/10356/2928
• Institution: Nanyang Technological University

Nowadays, semiconductor lasers have become one of the most indispensable components in the optoelectronic systems and found increasing applications for a variety of purposes, such as for optical storage (GalnP/AlGalnP red lasers), for pumping solid state lasers (DPSSL) (InGaAs/GaAs infrared lasers) as well as for optical fiber communication (GaAs-based 1.3 & 1.55 um lasers). With the development of the modern epitaxial growth techniques such as molecular beam epitaxy (MBE) and metal organic chemical vapor deposition (MOCVD), the evolution of the active region in the semiconductor lasers has been taken place, from bulk material to low-dimensional structure such as quantum well (QW) and quantum dot (QD). With the low-dimensional structures, the semiconductor laser performance has been improved significantly.