Development of semiconductor lasers emitting in the visible (0.6 um) to mid-infrared (2.6 um) regions

Development of semiconductor lasers emitting in the visible (0.6 um) to mid-infrared (2.6 um) regions

The project established the basic technologies in the development of the semiconductor laser diode in NTU. The scope includes epitaxial growth, laser device processing, as well as laser performance characterization and analysis.

Saved in:
Bibliographic Details
Main Authors: Chan, Yuen Chuen, Lam, Yee Loy
Other Authors: School of Electrical and Electronic Engineering
Format: Research Report
Published: 2008
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
Online Access:http://hdl.handle.net/10356/3041
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: Nanyang Technological University
Description
Summary:The project established the basic technologies in the development of the semiconductor laser diode in NTU. The scope includes epitaxial growth, laser device processing, as well as laser performance characterization and analysis.

Similar Items