Wideband CDMA power amplifier
This report discusses the design and development of High Power (10W) RF amplifier for emerging Wide-band CDMA (WCDMA) applications. Our design is based on the latest Laterally Diffused Metal Oxide Semiconductor (LDMOS) transistor MRF 282, from Motorola. In this report, we discuss the device selectio...
Saved in:
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Theses and Dissertations |
| Published: |
2008
|
| Subjects: | |
| Online Access: | http://hdl.handle.net/10356/3202 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Institution: | Nanyang Technological University |
| Summary: | This report discusses the design and development of High Power (10W) RF amplifier for emerging Wide-band CDMA (WCDMA) applications. Our design is based on the latest Laterally Diffused Metal Oxide Semiconductor (LDMOS) transistor MRF 282, from Motorola. In this report, we discuss the device selection criteria, the actual design of the amplifier circuit and it's simulation using HP EESof LIBRA™. We also discuss the fabrication techniques for the amplifier. Following this, we discuss the test setup, procedures and the results obtained from our amplifier. We finally conclude our discussion with some recommendations for future work in this field. |
|---|