Wideband CDMA power amplifier

This report discusses the design and development of High Power (10W) RF amplifier for emerging Wide-band CDMA (WCDMA) applications. Our design is based on the latest Laterally Diffused Metal Oxide Semiconductor (LDMOS) transistor MRF 282, from Motorola. In this report, we discuss the device selectio...

Full description

Saved in:
Bibliographic Details
Main Author: Sathish Shanbhag Kota
Other Authors: Law, Choi Look
Format: Theses and Dissertations
Published: 2008
Subjects:
Online Access:http://hdl.handle.net/10356/3202
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: Nanyang Technological University
id sg-ntu-dr.10356-3202
record_format dspace
spelling sg-ntu-dr.10356-32022023-07-04T15:09:49Z Wideband CDMA power amplifier Sathish Shanbhag Kota Law, Choi Look School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits This report discusses the design and development of High Power (10W) RF amplifier for emerging Wide-band CDMA (WCDMA) applications. Our design is based on the latest Laterally Diffused Metal Oxide Semiconductor (LDMOS) transistor MRF 282, from Motorola. In this report, we discuss the device selection criteria, the actual design of the amplifier circuit and it's simulation using HP EESof LIBRA™. We also discuss the fabrication techniques for the amplifier. Following this, we discuss the test setup, procedures and the results obtained from our amplifier. We finally conclude our discussion with some recommendations for future work in this field. Master of Science (Communication and Network Systems) 2008-09-17T09:24:31Z 2008-09-17T09:24:31Z 2000 2000 Thesis http://hdl.handle.net/10356/3202 Nanyang Technological University application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
topic DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
Sathish Shanbhag Kota
Wideband CDMA power amplifier
description This report discusses the design and development of High Power (10W) RF amplifier for emerging Wide-band CDMA (WCDMA) applications. Our design is based on the latest Laterally Diffused Metal Oxide Semiconductor (LDMOS) transistor MRF 282, from Motorola. In this report, we discuss the device selection criteria, the actual design of the amplifier circuit and it's simulation using HP EESof LIBRA™. We also discuss the fabrication techniques for the amplifier. Following this, we discuss the test setup, procedures and the results obtained from our amplifier. We finally conclude our discussion with some recommendations for future work in this field.
author2 Law, Choi Look
author_facet Law, Choi Look
Sathish Shanbhag Kota
format Theses and Dissertations
author Sathish Shanbhag Kota
author_sort Sathish Shanbhag Kota
title Wideband CDMA power amplifier
title_short Wideband CDMA power amplifier
title_full Wideband CDMA power amplifier
title_fullStr Wideband CDMA power amplifier
title_full_unstemmed Wideband CDMA power amplifier
title_sort wideband cdma power amplifier
publishDate 2008
url http://hdl.handle.net/10356/3202
_version_ 1772829146437648384