Experimental modeling of body effects in MOS devices
Explored the body effects of deep submicron Lightly-Doped-Drain (LDD) pMOSFETs operating in a Bi-MOS hybrid-mode environment. Developed an experimentally based analytical body current model.
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2008
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Online Access: | http://hdl.handle.net/10356/3209 |
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sg-ntu-dr.10356-32092023-07-04T15:44:13Z Experimental modeling of body effects in MOS devices Seah, Lionel Siau Hing. Ma, Jian-Guo School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits Explored the body effects of deep submicron Lightly-Doped-Drain (LDD) pMOSFETs operating in a Bi-MOS hybrid-mode environment. Developed an experimentally based analytical body current model. Master of Engineering 2008-09-17T09:24:37Z 2008-09-17T09:24:37Z 2000 2000 Thesis http://hdl.handle.net/10356/3209 Nanyang Technological University application/pdf |
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DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits Seah, Lionel Siau Hing. Experimental modeling of body effects in MOS devices |
description |
Explored the body effects of deep submicron Lightly-Doped-Drain (LDD) pMOSFETs operating in a Bi-MOS hybrid-mode environment. Developed an experimentally based analytical body current model. |
author2 |
Ma, Jian-Guo |
author_facet |
Ma, Jian-Guo Seah, Lionel Siau Hing. |
format |
Theses and Dissertations |
author |
Seah, Lionel Siau Hing. |
author_sort |
Seah, Lionel Siau Hing. |
title |
Experimental modeling of body effects in MOS devices |
title_short |
Experimental modeling of body effects in MOS devices |
title_full |
Experimental modeling of body effects in MOS devices |
title_fullStr |
Experimental modeling of body effects in MOS devices |
title_full_unstemmed |
Experimental modeling of body effects in MOS devices |
title_sort |
experimental modeling of body effects in mos devices |
publishDate |
2008 |
url |
http://hdl.handle.net/10356/3209 |
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1772825228574982144 |