Experimental modeling of body effects in MOS devices

Explored the body effects of deep submicron Lightly-Doped-Drain (LDD) pMOSFETs operating in a Bi-MOS hybrid-mode environment. Developed an experimentally based analytical body current model.

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Bibliographic Details
Main Author: Seah, Lionel Siau Hing.
Other Authors: Ma, Jian-Guo
Format: Theses and Dissertations
Published: 2008
Subjects:
Online Access:http://hdl.handle.net/10356/3209
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Institution: Nanyang Technological University
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