Design of semiconductor high-power laser diodes
High power semiconductor laser diode structure for lasing at 808nm wavelength has been designed. Its performance such as threshold current, slope efficiency, CW power output has been simulated to optimize the device structure.
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| Format: | Theses and Dissertations |
| Published: |
2008
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| Online Access: | http://hdl.handle.net/10356/3356 |
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| Institution: | Nanyang Technological University |
| Summary: | High power semiconductor laser diode structure for lasing at 808nm wavelength has been designed. Its performance such as threshold current, slope efficiency, CW power output has been simulated to optimize the device structure. |
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