Design of semiconductor high-power laser diodes
High power semiconductor laser diode structure for lasing at 808nm wavelength has been designed. Its performance such as threshold current, slope efficiency, CW power output has been simulated to optimize the device structure.
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2008
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sg-ntu-dr.10356-33562023-07-04T16:49:29Z Design of semiconductor high-power laser diodes Tan, Guan Seng. Tang, Xiaohong School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Semiconductors High power semiconductor laser diode structure for lasing at 808nm wavelength has been designed. Its performance such as threshold current, slope efficiency, CW power output has been simulated to optimize the device structure. Master of Science (Photonics) 2008-09-17T09:28:10Z 2008-09-17T09:28:10Z 2004 2004 Thesis http://hdl.handle.net/10356/3356 Nanyang Technological University application/pdf |
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DRNTU::Engineering::Electrical and electronic engineering::Semiconductors Tan, Guan Seng. Design of semiconductor high-power laser diodes |
description |
High power semiconductor laser diode structure for lasing at 808nm wavelength has been designed. Its performance such as threshold current, slope efficiency, CW power output has been simulated to optimize the device structure. |
author2 |
Tang, Xiaohong |
author_facet |
Tang, Xiaohong Tan, Guan Seng. |
format |
Theses and Dissertations |
author |
Tan, Guan Seng. |
author_sort |
Tan, Guan Seng. |
title |
Design of semiconductor high-power laser diodes |
title_short |
Design of semiconductor high-power laser diodes |
title_full |
Design of semiconductor high-power laser diodes |
title_fullStr |
Design of semiconductor high-power laser diodes |
title_full_unstemmed |
Design of semiconductor high-power laser diodes |
title_sort |
design of semiconductor high-power laser diodes |
publishDate |
2008 |
url |
http://hdl.handle.net/10356/3356 |
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1772826826006069248 |