Effect of surface treatments on Cu/Ultra-low k interconnection technology

Effect of surface treatments on Cu/Ultra-low k interconnection technology

Single damascene copper interconnect structures were fabricated. Cu/ultra-low-k (porous SiLKTM) interconnects were subjected to surface treatments to study the effects on the structural and electrical properties, including Fourier transform infrared spectroscopy, atomic force microscopy and electr...

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Main Author: Tan, Hwa Jin.
Other Authors: Lau, Wai Shing
Format: Theses and Dissertations
Published: 2008
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
Online Access:http://hdl.handle.net/10356/3363
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Institution: Nanyang Technological University
id sg-ntu-dr.10356-3363
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spelling sg-ntu-dr.10356-33632023-07-04T16:15:20Z Effect of surface treatments on Cu/Ultra-low k interconnection technology Tan, Hwa Jin. Lau, Wai Shing School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials Single damascene copper interconnect structures were fabricated. Cu/ultra-low-k (porous SiLKTM) interconnects were subjected to surface treatments to study the effects on the structural and electrical properties, including Fourier transform infrared spectroscopy, atomic force microscopy and electrical testing. Master of Science (Microelectronics) 2008-09-17T09:28:20Z 2008-09-17T09:28:20Z 2004 2004 Thesis http://hdl.handle.net/10356/3363 Nanyang Technological University application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
topic DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
Tan, Hwa Jin.
Effect of surface treatments on Cu/Ultra-low k interconnection technology
description Single damascene copper interconnect structures were fabricated. Cu/ultra-low-k (porous SiLKTM) interconnects were subjected to surface treatments to study the effects on the structural and electrical properties, including Fourier transform infrared spectroscopy, atomic force microscopy and electrical testing.
author2 Lau, Wai Shing
author_facet Lau, Wai Shing
Tan, Hwa Jin.
format Theses and Dissertations
author Tan, Hwa Jin.
author_sort Tan, Hwa Jin.
title Effect of surface treatments on Cu/Ultra-low k interconnection technology
title_short Effect of surface treatments on Cu/Ultra-low k interconnection technology
title_full Effect of surface treatments on Cu/Ultra-low k interconnection technology
title_fullStr Effect of surface treatments on Cu/Ultra-low k interconnection technology
title_full_unstemmed Effect of surface treatments on Cu/Ultra-low k interconnection technology
title_sort effect of surface treatments on cu/ultra-low k interconnection technology
publishDate 2008
url http://hdl.handle.net/10356/3363
_version_ 1772826480165781504

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