Process and device characterisation of advanced SOI devices

Process and device characterisation of advanced SOI devices

The goal of this work is to investigate and develop fabrication technology for quadruple-gate (hereby called Double-gate-all-around) MOSFET and the novel n-gate device. It focuses on the process and device characterization of such advanced SOI devices. Most importantly, the process proposed in this...

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Main Author: Chan, Yeen Tat
Other Authors: Ang Diing Shenp
Format: Theses and Dissertations
Published: 2008
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
Online Access:https://hdl.handle.net/10356/3393
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Institution: Nanyang Technological University
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spelling sg-ntu-dr.10356-33932023-07-04T16:55:44Z Process and device characterisation of advanced SOI devices Chan, Yeen Tat Ang Diing Shenp Goh Wang Ling School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits The goal of this work is to investigate and develop fabrication technology for quadruple-gate (hereby called Double-gate-all-around) MOSFET and the novel n-gate device. It focuses on the process and device characterization of such advanced SOI devices. Most importantly, the process proposed in this work to fabricate such devices is compatible with standard bulk CMOS manufacturing. MASTER OF ENGINEERING (EEE) 2008-09-17T09:29:12Z 2008-09-17T09:29:12Z 2005 2005 Thesis Chan, Y. T. (2005). Process and device characterisation of advanced SOI devices. Master’s thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/3393 10.32657/10356/3393 Nanyang Technological University application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
topic DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
Chan, Yeen Tat
Process and device characterisation of advanced SOI devices
description The goal of this work is to investigate and develop fabrication technology for quadruple-gate (hereby called Double-gate-all-around) MOSFET and the novel n-gate device. It focuses on the process and device characterization of such advanced SOI devices. Most importantly, the process proposed in this work to fabricate such devices is compatible with standard bulk CMOS manufacturing.
author2 Ang Diing Shenp
author_facet Ang Diing Shenp
Chan, Yeen Tat
format Theses and Dissertations
author Chan, Yeen Tat
author_sort Chan, Yeen Tat
title Process and device characterisation of advanced SOI devices
title_short Process and device characterisation of advanced SOI devices
title_full Process and device characterisation of advanced SOI devices
title_fullStr Process and device characterisation of advanced SOI devices
title_full_unstemmed Process and device characterisation of advanced SOI devices
title_sort process and device characterisation of advanced soi devices
publishDate 2008
url https://hdl.handle.net/10356/3393
_version_ 1772828730945699840

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