Process and device characterisation of advanced SOI devices
The goal of this work is to investigate and develop fabrication technology for quadruple-gate (hereby called Double-gate-all-around) MOSFET and the novel n-gate device. It focuses on the process and device characterization of such advanced SOI devices. Most importantly, the process proposed in this...
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Format: | Theses and Dissertations |
Published: |
2008
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Online Access: | https://hdl.handle.net/10356/3393 |
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Institution: | Nanyang Technological University |
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