Process and device characterisation of advanced SOI devices

The goal of this work is to investigate and develop fabrication technology for quadruple-gate (hereby called Double-gate-all-around) MOSFET and the novel n-gate device. It focuses on the process and device characterization of such advanced SOI devices. Most importantly, the process proposed in this...

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Bibliographic Details
Main Author: Chan, Yeen Tat
Other Authors: Ang Diing Shenp
Format: Theses and Dissertations
Published: 2008
Subjects:
Online Access:https://hdl.handle.net/10356/3393
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Institution: Nanyang Technological University
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