New techniques for localization of shorted and open interconnect failures in ICs by using laser beam technology

Open-circuit and short-circuit defects in electrical conductors within integrated circuits (ICs) can result in major IC yield and reliability problems. A capability for localizing and identifying these types of defects is important for analyzing ICs to determine failure mechanisms therein, for quali...

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Bibliographic Details
Main Author:	Thaw Zin Myint.
Other Authors:	Ong, Vincent Keng Sian
Format:	Theses and Dissertations
Published:	2008
Subjects:	DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits
Online Access:	http://hdl.handle.net/10356/3576
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Institution:	Nanyang Technological University

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spelling	sg-ntu-dr.10356-35762023-07-04T15:11:21Z New techniques for localization of shorted and open interconnect failures in ICs by using laser beam technology Thaw Zin Myint. Ong, Vincent Keng Sian School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits Open-circuit and short-circuit defects in electrical conductors within integrated circuits (ICs) can result in major IC yield and reliability problems. A capability for localizing and identifying these types of defects is important for analyzing ICs to determine failure mechanisms therein, for qualifying ICs as known-good devices, and for implementing corrective action during IC fabrication to minimize the occurrence of such defects. Master of Science (Consumer Electronics) 2008-09-17T09:32:48Z 2008-09-17T09:32:48Z 2004 2004 Thesis http://hdl.handle.net/10356/3576 Nanyang Technological University application/pdf
institution	Nanyang Technological University
building	NTU Library
continent	Asia
country	Singapore Singapore
content_provider	NTU Library
collection	DR-NTU
topic	DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits
spellingShingle	DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits Thaw Zin Myint. New techniques for localization of shorted and open interconnect failures in ICs by using laser beam technology
description	Open-circuit and short-circuit defects in electrical conductors within integrated circuits (ICs) can result in major IC yield and reliability problems. A capability for localizing and identifying these types of defects is important for analyzing ICs to determine failure mechanisms therein, for qualifying ICs as known-good devices, and for implementing corrective action during IC fabrication to minimize the occurrence of such defects.
author2	Ong, Vincent Keng Sian
author_facet	Ong, Vincent Keng Sian Thaw Zin Myint.
format	Theses and Dissertations
author	Thaw Zin Myint.
author_sort	Thaw Zin Myint.
title	New techniques for localization of shorted and open interconnect failures in ICs by using laser beam technology
title_short	New techniques for localization of shorted and open interconnect failures in ICs by using laser beam technology
title_full	New techniques for localization of shorted and open interconnect failures in ICs by using laser beam technology
title_fullStr	New techniques for localization of shorted and open interconnect failures in ICs by using laser beam technology
title_full_unstemmed	New techniques for localization of shorted and open interconnect failures in ICs by using laser beam technology
title_sort	new techniques for localization of shorted and open interconnect failures in ics by using laser beam technology
publishDate	2008
url	http://hdl.handle.net/10356/3576
_version_	1772825116216918016

New techniques for localization of shorted and open interconnect failures in ICs by using laser beam technology

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