Rare earth oxide for nanoelectronics
This project primarily focus is on investigating whether the introduction of a passivation layer would allow for the formation of a more uniform coating on the Si substrate surface. The thin films are used in various devices such as metal-oxide-semiconductor (CMOS) transistors. The scaling down of...
Saved in:
主要作者: | |
---|---|
其他作者: | |
格式: | Final Year Project |
語言: | English |
出版: |
2010
|
主題: | |
在線閱讀: | http://hdl.handle.net/10356/36178 |
標簽: |
添加標簽
沒有標簽, 成為第一個標記此記錄!
|
機構: | Nanyang Technological University |
語言: | English |