Predictive technology modeling for deep-submicron MOSFET design
The predictive technology modeling using numerical and compact model for deep-submicron MOSFET is explored in this thesis. The devices are designed for a broad range of nMOSFETs with different pile-up/different LDD extension under gate structures. The investigations inludes numerical modeling for th...
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| Format: | Theses and Dissertations |
| Published: |
2008
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| Online Access: | http://hdl.handle.net/10356/3709 |
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| Institution: | Nanyang Technological University |
| Summary: | The predictive technology modeling using numerical and compact model for deep-submicron MOSFET is explored in this thesis. The devices are designed for a broad range of nMOSFETs with different pile-up/different LDD extension under gate structures. The investigations inludes numerical modeling for threshold voltage, with different pile-up structure MOSFETs. |
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