Predictive technology modeling for deep-submicron MOSFET design

The predictive technology modeling using numerical and compact model for deep-submicron MOSFET is explored in this thesis. The devices are designed for a broad range of nMOSFETs with different pile-up/different LDD extension under gate structures. The investigations inludes numerical modeling for th...

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Bibliographic Details
Main Author:	Wang, Yuwen.
Other Authors:	Zhou, Xing
Format:	Theses and Dissertations
Published:	2008
Subjects:	DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Online Access:	http://hdl.handle.net/10356/3709
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Institution:	Nanyang Technological University

id	sg-ntu-dr.10356-3709
record_format	dspace
spelling	sg-ntu-dr.10356-37092023-07-04T15:45:02Z Predictive technology modeling for deep-submicron MOSFET design Wang, Yuwen. Zhou, Xing School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Semiconductors The predictive technology modeling using numerical and compact model for deep-submicron MOSFET is explored in this thesis. The devices are designed for a broad range of nMOSFETs with different pile-up/different LDD extension under gate structures. The investigations inludes numerical modeling for threshold voltage, with different pile-up structure MOSFETs. Master of Engineering 2008-09-17T09:35:42Z 2008-09-17T09:35:42Z 2002 2002 Thesis http://hdl.handle.net/10356/3709 Nanyang Technological University application/pdf
institution	Nanyang Technological University
building	NTU Library
continent	Asia
country	Singapore Singapore
content_provider	NTU Library
collection	DR-NTU
topic	DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
spellingShingle	DRNTU::Engineering::Electrical and electronic engineering::Semiconductors Wang, Yuwen. Predictive technology modeling for deep-submicron MOSFET design
description	The predictive technology modeling using numerical and compact model for deep-submicron MOSFET is explored in this thesis. The devices are designed for a broad range of nMOSFETs with different pile-up/different LDD extension under gate structures. The investigations inludes numerical modeling for threshold voltage, with different pile-up structure MOSFETs.
author2	Zhou, Xing
author_facet	Zhou, Xing Wang, Yuwen.
format	Theses and Dissertations
author	Wang, Yuwen.
author_sort	Wang, Yuwen.
title	Predictive technology modeling for deep-submicron MOSFET design
title_short	Predictive technology modeling for deep-submicron MOSFET design
title_full	Predictive technology modeling for deep-submicron MOSFET design
title_fullStr	Predictive technology modeling for deep-submicron MOSFET design
title_full_unstemmed	Predictive technology modeling for deep-submicron MOSFET design
title_sort	predictive technology modeling for deep-submicron mosfet design
publishDate	2008
url	http://hdl.handle.net/10356/3709
_version_	1772825867591876608

Predictive technology modeling for deep-submicron MOSFET design

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