Predictive technology modeling for deep-submicron MOSFET design
The predictive technology modeling using numerical and compact model for deep-submicron MOSFET is explored in this thesis. The devices are designed for a broad range of nMOSFETs with different pile-up/different LDD extension under gate structures. The investigations inludes numerical modeling for th...
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| 格式: | Theses and Dissertations |
| 出版: |
2008
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| 主題: | |
| 在線閱讀: | http://hdl.handle.net/10356/3709 |
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| 機構: | Nanyang Technological University |