Characterization and modeling of deep-submicron MOSFET's including frequency effects
This thesis presents the approaches to characterize the deep submicron-meter MOSFETs operating both in DC and in high frequency region. This thesis also conducts a comprehensive study and investigation on the high-frequency behaviours of the MOSFETs.
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Format: | Theses and Dissertations |
Published: |
2008
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Online Access: | http://hdl.handle.net/10356/3746 |
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Institution: | Nanyang Technological University |
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