Lutetium oxide (Lu2O3) gate dielectric fabricated by pulsed laser deposition

• 主要作者: Peter Darmawan
• 其他作者: Wang Shi Jie
• 格式: Theses and Dissertations
• 語言: English
• 出版: 2010
• 主題: DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics; DRNTU::Engineering::Electrical and electronic engineering::Semiconductors; DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films; DRNTU::Engineering::Materials::Material testing and characterization
• 在線閱讀: https://hdl.handle.net/10356/38588

The aim of this project is to investigate the suitability of rare-earth oxide as gate dielectric, in particular Lu2O3. There are three main chapters, in which the properties of Lu2O3 film, the effect of post-deposition treatments on Lu2O3 film as well as the properties of Lu2O3 on the next generatio...