Effect of low fluence laser annealing on ultrathin Lu2O3 high-k dielectric

• Main Authors: Darmawan, P., Setiawan, Y., Osipowicz, T., Lee, Pooi See, Ma, Jan
• Other Authors: School of Materials Science & Engineering
• Format: Article
• Language: English
• Published: 2012
• Subjects: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
• Online Access: https://hdl.handle.net/10356/94240; http://hdl.handle.net/10220/8092
• Institution: Nanyang Technological University

The effect of low fluence single pulse laser annealing on a pulsed laser deposited high-k dielectric, Lu2O3 is reported. With low fluence laser irradiation, high “k” of 45 is achieved with an equivalent...