Interface strain study of thin Lu2O3/Si using HRBS

The interface of thin Lu2O3 on silicon has been studied using high-resolution RBS (HRBS) for samples annealed at different temperatures. Thin rare earth metal oxides are of interest as candidates for next generation transistor gate dielectrics, due to their high-k values allowing for equivalent oxid...

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Bibliographic Details
Main Authors: Chan, T. K., Darmawan, P., Ho, C. S., Malar, P., Osipowicz, T., Lee, Pooi See
Other Authors: School of Materials Science & Engineering
Format: Article
Language:English
Published: 2013
Subjects:
Online Access:https://hdl.handle.net/10356/97350
http://hdl.handle.net/10220/10513
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Institution: Nanyang Technological University
Language: English