Interface strain study of thin Lu2O3/Si using HRBS
The interface of thin Lu2O3 on silicon has been studied using high-resolution RBS (HRBS) for samples annealed at different temperatures. Thin rare earth metal oxides are of interest as candidates for next generation transistor gate dielectrics, due to their high-k values allowing for equivalent oxid...
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sg-ntu-dr.10356-973502020-06-01T10:13:48Z Interface strain study of thin Lu2O3/Si using HRBS Chan, T. K. Darmawan, P. Ho, C. S. Malar, P. Osipowicz, T. Lee, Pooi See School of Materials Science & Engineering DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films The interface of thin Lu2O3 on silicon has been studied using high-resolution RBS (HRBS) for samples annealed at different temperatures. Thin rare earth metal oxides are of interest as candidates for next generation transistor gate dielectrics, due to their high-k values allowing for equivalent oxide thickness (EOT) of less than 1 nm. Among them, Lu2O3 has been found to have the highest lattice energy and largest band gap, making it a good candidate for an alternative high-k gate dielectric. HRBS depth profiling results have shown the existence of a thin (∼2 nm) transitional silicate layer beneath the Lu2O3 films. The thicknesses of the Lu2O3 films were found to be ∼8 nm and the films were determined to be non-crystalline. Angular scans were performed across the [1 1 0] and [1 1 1] axis along planar channels, and clear shifts in the channeling minimum indicate the presence of Si lattice strain at the silicate/Si interface. 2013-06-20T08:01:17Z 2019-12-06T19:41:45Z 2013-06-20T08:01:17Z 2019-12-06T19:41:45Z 2008 2008 Journal Article Chan, T. K., Darmawan, P., Ho, C. S., Malar, P., Lee, P. S., & Osipowicz, T. (2008). Interface strain study of thin Lu2O3/Si using HRBS. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 266(8), 1486-1489. 0168-583X https://hdl.handle.net/10356/97350 http://hdl.handle.net/10220/10513 10.1016/j.nimb.2007.12.090 en Nuclear instruments and methods in physics research section B: beam interactions with materials and atoms © 2008 Elsevier B.V. |
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DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films Chan, T. K. Darmawan, P. Ho, C. S. Malar, P. Osipowicz, T. Lee, Pooi See Interface strain study of thin Lu2O3/Si using HRBS |
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The interface of thin Lu2O3 on silicon has been studied using high-resolution RBS (HRBS) for samples annealed at different temperatures. Thin rare earth metal oxides are of interest as candidates for next generation transistor gate dielectrics, due to their high-k values allowing for equivalent oxide thickness (EOT) of less than 1 nm. Among them, Lu2O3 has been found to have the highest lattice energy and largest band gap, making it a good candidate for an alternative high-k gate dielectric. HRBS depth profiling results have shown the existence of a thin (∼2 nm) transitional silicate layer beneath the Lu2O3 films. The thicknesses of the Lu2O3 films were found to be ∼8 nm and the films were determined to be non-crystalline. Angular scans were performed across the [1 1 0] and [1 1 1] axis along planar channels, and clear shifts in the channeling minimum indicate the presence of Si lattice strain at the silicate/Si interface. |
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School of Materials Science & Engineering |
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School of Materials Science & Engineering Chan, T. K. Darmawan, P. Ho, C. S. Malar, P. Osipowicz, T. Lee, Pooi See |
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Article |
author |
Chan, T. K. Darmawan, P. Ho, C. S. Malar, P. Osipowicz, T. Lee, Pooi See |
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Chan, T. K. |
title |
Interface strain study of thin Lu2O3/Si using HRBS |
title_short |
Interface strain study of thin Lu2O3/Si using HRBS |
title_full |
Interface strain study of thin Lu2O3/Si using HRBS |
title_fullStr |
Interface strain study of thin Lu2O3/Si using HRBS |
title_full_unstemmed |
Interface strain study of thin Lu2O3/Si using HRBS |
title_sort |
interface strain study of thin lu2o3/si using hrbs |
publishDate |
2013 |
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https://hdl.handle.net/10356/97350 http://hdl.handle.net/10220/10513 |
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1681056903466057728 |