Interface strain study of thin Lu2O3/Si using HRBS

The interface of thin Lu2O3 on silicon has been studied using high-resolution RBS (HRBS) for samples annealed at different temperatures. Thin rare earth metal oxides are of interest as candidates for next generation transistor gate dielectrics, due to their high-k values allowing for equivalent oxid...

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Main Authors: Chan, T. K., Darmawan, P., Ho, C. S., Malar, P., Osipowicz, T., Lee, Pooi See
Other Authors: School of Materials Science & Engineering
Format: Article
Language:English
Published: 2013
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Online Access:https://hdl.handle.net/10356/97350
http://hdl.handle.net/10220/10513
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-973502020-06-01T10:13:48Z Interface strain study of thin Lu2O3/Si using HRBS Chan, T. K. Darmawan, P. Ho, C. S. Malar, P. Osipowicz, T. Lee, Pooi See School of Materials Science & Engineering DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films The interface of thin Lu2O3 on silicon has been studied using high-resolution RBS (HRBS) for samples annealed at different temperatures. Thin rare earth metal oxides are of interest as candidates for next generation transistor gate dielectrics, due to their high-k values allowing for equivalent oxide thickness (EOT) of less than 1 nm. Among them, Lu2O3 has been found to have the highest lattice energy and largest band gap, making it a good candidate for an alternative high-k gate dielectric. HRBS depth profiling results have shown the existence of a thin (∼2 nm) transitional silicate layer beneath the Lu2O3 films. The thicknesses of the Lu2O3 films were found to be ∼8 nm and the films were determined to be non-crystalline. Angular scans were performed across the [1 1 0] and [1 1 1] axis along planar channels, and clear shifts in the channeling minimum indicate the presence of Si lattice strain at the silicate/Si interface. 2013-06-20T08:01:17Z 2019-12-06T19:41:45Z 2013-06-20T08:01:17Z 2019-12-06T19:41:45Z 2008 2008 Journal Article Chan, T. K., Darmawan, P., Ho, C. S., Malar, P., Lee, P. S., & Osipowicz, T. (2008). Interface strain study of thin Lu2O3/Si using HRBS. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 266(8), 1486-1489. 0168-583X https://hdl.handle.net/10356/97350 http://hdl.handle.net/10220/10513 10.1016/j.nimb.2007.12.090 en Nuclear instruments and methods in physics research section B: beam interactions with materials and atoms © 2008 Elsevier B.V.
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
spellingShingle DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
Chan, T. K.
Darmawan, P.
Ho, C. S.
Malar, P.
Osipowicz, T.
Lee, Pooi See
Interface strain study of thin Lu2O3/Si using HRBS
description The interface of thin Lu2O3 on silicon has been studied using high-resolution RBS (HRBS) for samples annealed at different temperatures. Thin rare earth metal oxides are of interest as candidates for next generation transistor gate dielectrics, due to their high-k values allowing for equivalent oxide thickness (EOT) of less than 1 nm. Among them, Lu2O3 has been found to have the highest lattice energy and largest band gap, making it a good candidate for an alternative high-k gate dielectric. HRBS depth profiling results have shown the existence of a thin (∼2 nm) transitional silicate layer beneath the Lu2O3 films. The thicknesses of the Lu2O3 films were found to be ∼8 nm and the films were determined to be non-crystalline. Angular scans were performed across the [1 1 0] and [1 1 1] axis along planar channels, and clear shifts in the channeling minimum indicate the presence of Si lattice strain at the silicate/Si interface.
author2 School of Materials Science & Engineering
author_facet School of Materials Science & Engineering
Chan, T. K.
Darmawan, P.
Ho, C. S.
Malar, P.
Osipowicz, T.
Lee, Pooi See
format Article
author Chan, T. K.
Darmawan, P.
Ho, C. S.
Malar, P.
Osipowicz, T.
Lee, Pooi See
author_sort Chan, T. K.
title Interface strain study of thin Lu2O3/Si using HRBS
title_short Interface strain study of thin Lu2O3/Si using HRBS
title_full Interface strain study of thin Lu2O3/Si using HRBS
title_fullStr Interface strain study of thin Lu2O3/Si using HRBS
title_full_unstemmed Interface strain study of thin Lu2O3/Si using HRBS
title_sort interface strain study of thin lu2o3/si using hrbs
publishDate 2013
url https://hdl.handle.net/10356/97350
http://hdl.handle.net/10220/10513
_version_ 1681056903466057728