Effect of low fluence laser annealing on ultrathin Lu2O3 high-k dielectric

Effect of low fluence laser annealing on ultrathin Lu2O3 high-k dielectric

The effect of low fluence single pulse laser annealing on a pulsed laser deposited high-k dielectric, Lu2O3 is reported. With low fluence laser irradiation, high “k” of 45 is achieved with an equivalent...

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書目詳細資料
Main Authors:	Darmawan, P., Setiawan, Y., Osipowicz, T., Lee, Pooi See, Ma, Jan
其他作者:	School of Materials Science & Engineering
格式:	Article
語言:	English
出版:	2012
主題:	DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
在線閱讀:	https://hdl.handle.net/10356/94240 http://hdl.handle.net/10220/8092
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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