Investigating high-k on thin film

With the introduction of new materials, to overcome challenges in miniaturization, the silicon process technology works towards further scaling intensively. The research seeks to identify a gate dielectric material in replacement for silicon dioxide (SiO2) and to demonstrate reduced leakage current...

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Bibliographic Details
Main Author: Kee, Pei Ling.
Other Authors: Su Haibin
Format: Final Year Project
Language:English
Published: 2010
Subjects:
Online Access:http://hdl.handle.net/10356/38595
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Institution: Nanyang Technological University
Language: English