Investigating high-k on thin film
With the introduction of new materials, to overcome challenges in miniaturization, the silicon process technology works towards further scaling intensively. The research seeks to identify a gate dielectric material in replacement for silicon dioxide (SiO2) and to demonstrate reduced leakage current...
Saved in:
Main Author: | |
---|---|
Other Authors: | |
Format: | Final Year Project |
Language: | English |
Published: |
2010
|
Subjects: | |
Online Access: | http://hdl.handle.net/10356/38595 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | Nanyang Technological University |
Language: | English |