Lutetium oxide (Lu2O3) gate dielectric fabricated by pulsed laser deposition

• المؤلف الرئيسي: Peter Darmawan
• مؤلفون آخرون: Wang Shi Jie
• التنسيق: Theses and Dissertations
• اللغة: English
• منشور في: 2010
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics; DRNTU::Engineering::Electrical and electronic engineering::Semiconductors; DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films; DRNTU::Engineering::Materials::Material testing and characterization
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/38588
• المؤسسة: Nanyang Technological University

The aim of this project is to investigate the suitability of rare-earth oxide as gate dielectric, in particular Lu2O3. There are three main chapters, in which the properties of Lu2O3 film, the effect of post-deposition treatments on Lu2O3 film as well as the properties of Lu2O3 on the next generatio...