Deposition of Ta-N thin films as diffusion barrier

• Main Author: Zhang, Qing
• Other Authors: Hsieh, Jang-Hsing
• Format: Theses and Dissertations
• Published: 2008
• Subjects: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
• Online Access: http://hdl.handle.net/10356/5532
• Institution: Nanyang Technological University

Sputtered Ta-N thin films have been known to be an attractive interlayer between Cu and Si metallization as diffusion barrier. They have many good properties from the diffusion barrier point of view. They have high melting point (3293 K) and therefore expected to have high activation energy for both...