Deposition of Ta-N thin films as diffusion barrier
Sputtered Ta-N thin films have been known to be an attractive interlayer between Cu and Si metallization as diffusion barrier. They have many good properties from the diffusion barrier point of view. They have high melting point (3293 K) and therefore expected to have high activation energy for both...
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Main Author: | Zhang, Qing |
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Other Authors: | Hsieh, Jang-Hsing |
Format: | Theses and Dissertations |
Published: |
2008
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Subjects: | |
Online Access: | http://hdl.handle.net/10356/5532 |
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Institution: | Nanyang Technological University |
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