Resistance switching of BST thin films
The purpose of this project is to study the I-V characteristics of resistance switching oxides to give us a better understanding of their behaviors and the possibility of implementing them into memory devices. This study focuses on barium strontium titanium oxide. The sample is prepared by pulse las...
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Format: | Final Year Project |
Language: | English |
Published: |
2011
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Online Access: | http://hdl.handle.net/10356/44161 |
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Institution: | Nanyang Technological University |
Language: | English |