Resistance switching of BST thin films

The purpose of this project is to study the I-V characteristics of resistance switching oxides to give us a better understanding of their behaviors and the possibility of implementing them into memory devices. This study focuses on barium strontium titanium oxide. The sample is prepared by pulse las...

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Bibliographic Details
Main Author: Zhuo, Karen Jie Fang.
Other Authors: Wang Junling
Format: Final Year Project
Language:English
Published: 2011
Subjects:
Online Access:http://hdl.handle.net/10356/44161
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Institution: Nanyang Technological University
Language: English
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