Resistance switching of BST thin films
The purpose of this project is to study the I-V characteristics of resistance switching oxides to give us a better understanding of their behaviors and the possibility of implementing them into memory devices. This study focuses on barium strontium titanium oxide. The sample is prepared by pulse las...
Saved in:
Main Author: | |
---|---|
Other Authors: | |
Format: | Final Year Project |
Language: | English |
Published: |
2011
|
Subjects: | |
Online Access: | http://hdl.handle.net/10356/44161 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | Nanyang Technological University |
Language: | English |
Be the first to leave a comment!