Resistance switching of BST thin films
The purpose of this project is to study the I-V characteristics of resistance switching oxides to give us a better understanding of their behaviors and the possibility of implementing them into memory devices. This study focuses on barium strontium titanium oxide. The sample is prepared by pulse las...
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| 主要作者: | |
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| 格式: | Final Year Project |
| 語言: | English |
| 出版: |
2011
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| 主題: | |
| 在線閱讀: | http://hdl.handle.net/10356/44161 |
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