Deposition of Ta-N thin films as diffusion barrier

Deposition of Ta-N thin films as diffusion barrier

Sputtered Ta-N thin films have been known to be an attractive interlayer between Cu and Si metallization as diffusion barrier. They have many good properties from the diffusion barrier point of view. They have high melting point (3293 K) and therefore expected to have high activation energy for both...

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Main Author: Zhang, Qing
Other Authors: Hsieh, Jang-Hsing
Format: Theses and Dissertations
Published: 2008
Subjects:
DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
Online Access:http://hdl.handle.net/10356/5532
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Institution: Nanyang Technological University
id sg-ntu-dr.10356-5532
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spelling sg-ntu-dr.10356-55322023-03-11T17:27:07Z Deposition of Ta-N thin films as diffusion barrier Zhang, Qing Hsieh, Jang-Hsing School of Mechanical and Production Engineering DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films Sputtered Ta-N thin films have been known to be an attractive interlayer between Cu and Si metallization as diffusion barrier. They have many good properties from the diffusion barrier point of view. They have high melting point (3293 K) and therefore expected to have high activation energy for both lattice and grain boundary diffusion. It does not form intermetallic compounds with copper and thus provides a stable interface between copper and silicon. Master of Science (Precision Engineering) 2008-09-17T10:52:49Z 2008-09-17T10:52:49Z 2004 2004 Thesis http://hdl.handle.net/10356/5532 Nanyang Technological University application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
topic DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
spellingShingle DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
Zhang, Qing
Deposition of Ta-N thin films as diffusion barrier
description Sputtered Ta-N thin films have been known to be an attractive interlayer between Cu and Si metallization as diffusion barrier. They have many good properties from the diffusion barrier point of view. They have high melting point (3293 K) and therefore expected to have high activation energy for both lattice and grain boundary diffusion. It does not form intermetallic compounds with copper and thus provides a stable interface between copper and silicon.
author2 Hsieh, Jang-Hsing
author_facet Hsieh, Jang-Hsing
Zhang, Qing
format Theses and Dissertations
author Zhang, Qing
author_sort Zhang, Qing
title Deposition of Ta-N thin films as diffusion barrier
title_short Deposition of Ta-N thin films as diffusion barrier
title_full Deposition of Ta-N thin films as diffusion barrier
title_fullStr Deposition of Ta-N thin films as diffusion barrier
title_full_unstemmed Deposition of Ta-N thin films as diffusion barrier
title_sort deposition of ta-n thin films as diffusion barrier
publishDate 2008
url http://hdl.handle.net/10356/5532
_version_ 1761781478643990528

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