Development of power diode numerical modeling for inverse simulation
In this project a PC program is written to model the characteristics of the power diode under various conditions, including the forward bias, the reverse bias, the turn-on and the turn-off conditions. The results of the simulation of the program are compared with the results from MEDICI that is popu...
Saved in:
| 主要作者: | |
|---|---|
| 其他作者: | |
| 格式: | Theses and Dissertations |
| 出版: |
2008
|
| 主題: | |
| 在線閱讀: | http://hdl.handle.net/10356/3898 |
| 標簽: |
添加標簽
沒有標簽, 成為第一個標記此記錄!
|
| 機構: | Nanyang Technological University |
| id |
sg-ntu-dr.10356-3898 |
|---|---|
| record_format |
dspace |
| spelling |
sg-ntu-dr.10356-38982023-07-04T15:13:37Z Development of power diode numerical modeling for inverse simulation Yin, Jiaoli. Tan, Cher Ming School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Semiconductors In this project a PC program is written to model the characteristics of the power diode under various conditions, including the forward bias, the reverse bias, the turn-on and the turn-off conditions. The results of the simulation of the program are compared with the results from MEDICI that is popular simulation software based on workstation. The comparison shows that the PC program can do accurate or even better simulation for all doping structures and lifetime profiles. Master of Science (Microelectronics) 2008-09-17T09:39:58Z 2008-09-17T09:39:58Z 2003 2003 Thesis http://hdl.handle.net/10356/3898 Nanyang Technological University application/pdf |
| institution |
Nanyang Technological University |
| building |
NTU Library |
| continent |
Asia |
| country |
Singapore Singapore |
| content_provider |
NTU Library |
| collection |
DR-NTU |
| topic |
DRNTU::Engineering::Electrical and electronic engineering::Semiconductors |
| spellingShingle |
DRNTU::Engineering::Electrical and electronic engineering::Semiconductors Yin, Jiaoli. Development of power diode numerical modeling for inverse simulation |
| description |
In this project a PC program is written to model the characteristics of the power diode under various conditions, including the forward bias, the reverse bias, the turn-on and the turn-off conditions. The results of the simulation of the program are compared with the results from MEDICI that is popular simulation software based on workstation. The comparison shows that the PC program can do accurate or even better simulation for all doping structures and lifetime profiles. |
| author2 |
Tan, Cher Ming |
| author_facet |
Tan, Cher Ming Yin, Jiaoli. |
| format |
Theses and Dissertations |
| author |
Yin, Jiaoli. |
| author_sort |
Yin, Jiaoli. |
| title |
Development of power diode numerical modeling for inverse simulation |
| title_short |
Development of power diode numerical modeling for inverse simulation |
| title_full |
Development of power diode numerical modeling for inverse simulation |
| title_fullStr |
Development of power diode numerical modeling for inverse simulation |
| title_full_unstemmed |
Development of power diode numerical modeling for inverse simulation |
| title_sort |
development of power diode numerical modeling for inverse simulation |
| publishDate |
2008 |
| url |
http://hdl.handle.net/10356/3898 |
| _version_ |
1772826690576187392 |