Development of power diode numerical modeling for inverse simulation

In this project a PC program is written to model the characteristics of the power diode under various conditions, including the forward bias, the reverse bias, the turn-on and the turn-off conditions. The results of the simulation of the program are compared with the results from MEDICI that is popu...

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Bibliographic Details
Main Author:	Yin, Jiaoli.
Other Authors:	Tan, Cher Ming
Format:	Theses and Dissertations
Published:	2008
Subjects:	DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Online Access:	http://hdl.handle.net/10356/3898
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Institution:	Nanyang Technological University

id	sg-ntu-dr.10356-3898
record_format	dspace
spelling	sg-ntu-dr.10356-38982023-07-04T15:13:37Z Development of power diode numerical modeling for inverse simulation Yin, Jiaoli. Tan, Cher Ming School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Semiconductors In this project a PC program is written to model the characteristics of the power diode under various conditions, including the forward bias, the reverse bias, the turn-on and the turn-off conditions. The results of the simulation of the program are compared with the results from MEDICI that is popular simulation software based on workstation. The comparison shows that the PC program can do accurate or even better simulation for all doping structures and lifetime profiles. Master of Science (Microelectronics) 2008-09-17T09:39:58Z 2008-09-17T09:39:58Z 2003 2003 Thesis http://hdl.handle.net/10356/3898 Nanyang Technological University application/pdf
institution	Nanyang Technological University
building	NTU Library
continent	Asia
country	Singapore Singapore
content_provider	NTU Library
collection	DR-NTU
topic	DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
spellingShingle	DRNTU::Engineering::Electrical and electronic engineering::Semiconductors Yin, Jiaoli. Development of power diode numerical modeling for inverse simulation
description	In this project a PC program is written to model the characteristics of the power diode under various conditions, including the forward bias, the reverse bias, the turn-on and the turn-off conditions. The results of the simulation of the program are compared with the results from MEDICI that is popular simulation software based on workstation. The comparison shows that the PC program can do accurate or even better simulation for all doping structures and lifetime profiles.
author2	Tan, Cher Ming
author_facet	Tan, Cher Ming Yin, Jiaoli.
format	Theses and Dissertations
author	Yin, Jiaoli.
author_sort	Yin, Jiaoli.
title	Development of power diode numerical modeling for inverse simulation
title_short	Development of power diode numerical modeling for inverse simulation
title_full	Development of power diode numerical modeling for inverse simulation
title_fullStr	Development of power diode numerical modeling for inverse simulation
title_full_unstemmed	Development of power diode numerical modeling for inverse simulation
title_sort	development of power diode numerical modeling for inverse simulation
publishDate	2008
url	http://hdl.handle.net/10356/3898
_version_	1772826690576187392

Development of power diode numerical modeling for inverse simulation

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