High frequency noise modeling in low inversion region

The design of the low-voltage low-power RF circuit has become increasingly grown in demand. The existence of noise in MOSFET is one of the main challenges of the low-voltage low-power RFIC design. The performance of RF circuits strongly relies on upon how accurate the high frequency noise characteri...

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Bibliographic Details
Main Author: Chan, Kelvin Lye Hock
Other Authors: Yeo Kiat Seng
Format: Theses and Dissertations
Language:English
Published: 2015
Subjects:
Online Access:http://hdl.handle.net/10356/63796
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Institution: Nanyang Technological University
Language: English