High frequency noise modeling in low inversion region
The design of the low-voltage low-power RF circuit has become increasingly grown in demand. The existence of noise in MOSFET is one of the main challenges of the low-voltage low-power RFIC design. The performance of RF circuits strongly relies on upon how accurate the high frequency noise characteri...
Saved in:
Main Author: | Chan, Kelvin Lye Hock |
---|---|
Other Authors: | Yeo Kiat Seng |
Format: | Theses and Dissertations |
Language: | English |
Published: |
2015
|
Subjects: | |
Online Access: | http://hdl.handle.net/10356/63796 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | Nanyang Technological University |
Language: | English |
Similar Items
-
Analytical high frequency channel thermal noise modeling in deep sub-micron MOSFETs
by: Ong, Shih Ni, et al.
Published: (2010) -
High frequency noise modeling of deep-submicron MOSFETs
by: Ong, Shih Ni
Published: (2015) -
Low frequency noise measurement in the MOS transistor
by: Thet, Kyaw Win.
Published: (2011) -
Characterization and investigation of low-frequency noise in emerging CMOS
by: Wei, Chengqing
Published: (2011) -
High frequency noise in deep-submicrometer silicon mosfets
by: Su, Hao
Published: (2011)