Low frequency noise measurement in the MOS transistor

• المؤلف الرئيسي: Thet, Kyaw Win.
• مؤلفون آخرون: Ang Diing Shenp
• التنسيق: Final Year Project
• اللغة: English
• منشور في: 2011
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
• الوصول للمادة أونلاين: http://hdl.handle.net/10356/45922
• المؤسسة: Nanyang Technological University

Low frequency, 1/f noise measurements on a number of silicon dioxide gate dielectric based commercial MOS transistors and new material high-k gate dielectric transistors have been performed. The low frequency noise spectrum and the dependence of noise on the different gate dielectrics, channel lengt...