Low frequency noise measurement in the MOS transistor

Low frequency, 1/f noise measurements on a number of silicon dioxide gate dielectric based commercial MOS transistors and new material high-k gate dielectric transistors have been performed. The low frequency noise spectrum and the dependence of noise on the different gate dielectrics, channel lengt...

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Bibliographic Details
Main Author: Thet, Kyaw Win.
Other Authors: Ang Diing Shenp
Format: Final Year Project
Language:English
Published: 2011
Subjects:
Online Access:http://hdl.handle.net/10356/45922
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Institution: Nanyang Technological University
Language: English