Low frequency noise measurement in the MOS transistor

Low frequency, 1/f noise measurements on a number of silicon dioxide gate dielectric based commercial MOS transistors and new material high-k gate dielectric transistors have been performed. The low frequency noise spectrum and the dependence of noise on the different gate dielectrics, channel lengt...

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書目詳細資料
主要作者: Thet, Kyaw Win.
其他作者: Ang Diing Shenp
格式: Final Year Project
語言:English
出版: 2011
主題:
在線閱讀:http://hdl.handle.net/10356/45922
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