High frequency noise modeling in low inversion region
The design of the low-voltage low-power RF circuit has become increasingly grown in demand. The existence of noise in MOSFET is one of the main challenges of the low-voltage low-power RFIC design. The performance of RF circuits strongly relies on upon how accurate the high frequency noise characteri...
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Format: | Theses and Dissertations |
Language: | English |
Published: |
2015
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Online Access: | http://hdl.handle.net/10356/63796 |
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Institution: | Nanyang Technological University |
Language: | English |