A new field dependent mobility model for high frequency channel thermal noise of deep submicron RFCMOS

• Main Authors: Ong, Shih Ni, Yeo, Kiat Seng, Chew, Kok Wai Johnny, Chan, L. H. K., Loo, Xi Sung, Boon, Chirn Chye, Do, Manh Anh
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/96912; http://hdl.handle.net/10220/10377
• Institution: Nanyang Technological University

In this paper, a new field dependent effective mobility model including the drain-induced vertical field effect (DIVF) is presented to calculate the channel thermal noise of short channel MOSFETs operating at high frequencies. Based on the new channel thermal noise model, the simulated channel therm...