Nanoscale Si/SiGe based quantum well infrared photodetectors

67 p.

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Bibliographic Details
Main Author:	Agarwala, Shweta
Other Authors:	ZHANG Dao Hua
Format:	Thesis-Master by Coursework
Published:	Nanyang Technological University 2010
Subjects:	DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
Online Access:	http://hdl.handle.net/10356/39051
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Institution:	Nanyang Technological University

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spelling	sg-ntu-dr.10356-390512023-07-04T16:02:29Z Nanoscale Si/SiGe based quantum well infrared photodetectors Agarwala, Shweta ZHANG Dao Hua School of Electrical and Electronic Engineering EDHZHANG@ntu.edu.sg DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits 67 p. In this study, the photoresponse of Si/ SiGe based quantum well infrared photodetector structures was investigated. Two samples of SiGe and other SiGeC quantum well heterostructures were grown. Carbon was incorporated to reduce the strain and to increase the film stability and the bandgap. After processing the responsitivity of the detector was measured as a function of wavelength using the UV- visible spectrophotometer. Highest responsitivity of 1151.55mA/W has been shown, which very well lies in the infrared region. We also tried to detect any intersubband transitions. However, they were not observed in the samples due to a number of reasons. To obtain further insights in the structural quality of sample photoluminescence spectroscopy detecting the interband electron-hole pair recombination was performed. With the rise in the temperature from 5K to 70K the PL peak shifted form about 1.13E to about 1.25E for Sio.75Geo.25 material. The X-ray diffraction measurements were also carried out. The diffraction pattern of the SiGeC sample looks similar to SiGe at the first glance. But on close analysis and comparison of the diffraction patterns, the reduction of strain is evident for the former case. Master of Science (Microelectronics) 2010-05-21T04:38:45Z 2010-05-21T04:38:45Z 2007 2007 Thesis-Master by Coursework http://hdl.handle.net/10356/39051 application/pdf Nanyang Technological University
institution	Nanyang Technological University
building	NTU Library
continent	Asia
country	Singapore Singapore
content_provider	NTU Library
collection	DR-NTU
topic	DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
spellingShingle	DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits Agarwala, Shweta Nanoscale Si/SiGe based quantum well infrared photodetectors
description	67 p.
author2	ZHANG Dao Hua
author_facet	ZHANG Dao Hua Agarwala, Shweta
format	Thesis-Master by Coursework
author	Agarwala, Shweta
author_sort	Agarwala, Shweta
title	Nanoscale Si/SiGe based quantum well infrared photodetectors
title_short	Nanoscale Si/SiGe based quantum well infrared photodetectors
title_full	Nanoscale Si/SiGe based quantum well infrared photodetectors
title_fullStr	Nanoscale Si/SiGe based quantum well infrared photodetectors
title_full_unstemmed	Nanoscale Si/SiGe based quantum well infrared photodetectors
title_sort	nanoscale si/sige based quantum well infrared photodetectors
publisher	Nanyang Technological University
publishDate	2010
url	http://hdl.handle.net/10356/39051
_version_	1772827927897964544

Nanoscale Si/SiGe based quantum well infrared photodetectors

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