Design and fabrication of surface micromachined microbolometer for IR image sensor

Design and fabrication of surface micromachined microbolometer for IR image sensor

In this thesis, the integration of CMOS devices with microbolometer on the same silicon chip was studied. Silicon based materials Poly-Si and Poly-SiGe layers were deposited as the sensor films as well as the CMOS gate electrode. Microbolometer test structures and CMOS devices were fabricated using...

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Main Author: Yuan, Xiaohong.
Other Authors: Tse, Man Siu
Format: Theses and Dissertations
Published: 2008
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
Online Access:http://hdl.handle.net/10356/3916
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Institution: Nanyang Technological University
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spelling sg-ntu-dr.10356-39162023-07-04T15:16:45Z Design and fabrication of surface micromachined microbolometer for IR image sensor Yuan, Xiaohong. Tse, Man Siu School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits In this thesis, the integration of CMOS devices with microbolometer on the same silicon chip was studied. Silicon based materials Poly-Si and Poly-SiGe layers were deposited as the sensor films as well as the CMOS gate electrode. Microbolometer test structures and CMOS devices were fabricated using separately process flows. Master of Science (Microelectronics) 2008-09-17T09:40:19Z 2008-09-17T09:40:19Z 2002 2002 Thesis http://hdl.handle.net/10356/3916 Nanyang Technological University application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
topic DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
Yuan, Xiaohong.
Design and fabrication of surface micromachined microbolometer for IR image sensor
description In this thesis, the integration of CMOS devices with microbolometer on the same silicon chip was studied. Silicon based materials Poly-Si and Poly-SiGe layers were deposited as the sensor films as well as the CMOS gate electrode. Microbolometer test structures and CMOS devices were fabricated using separately process flows.
author2 Tse, Man Siu
author_facet Tse, Man Siu
Yuan, Xiaohong.
format Theses and Dissertations
author Yuan, Xiaohong.
author_sort Yuan, Xiaohong.
title Design and fabrication of surface micromachined microbolometer for IR image sensor
title_short Design and fabrication of surface micromachined microbolometer for IR image sensor
title_full Design and fabrication of surface micromachined microbolometer for IR image sensor
title_fullStr Design and fabrication of surface micromachined microbolometer for IR image sensor
title_full_unstemmed Design and fabrication of surface micromachined microbolometer for IR image sensor
title_sort design and fabrication of surface micromachined microbolometer for ir image sensor
publishDate 2008
url http://hdl.handle.net/10356/3916
_version_ 1772827697041375232

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