Novel via technology for high current densities

• Main Author: Yeo, Justin Ing Le.
• Other Authors: Christopher Shearwood
• Format: Final Year Project
• Language: English
• Published: 2010
• Subjects: DRNTU::Engineering::Manufacturing::Product engineering
• Online Access: http://hdl.handle.net/10356/40603
• Institution: Nanyang Technological University

Through-wafer electrical connections are becoming increasingly important for Micro-Electro-Mechanical systems (MEMS). For a MEMS design structure containing electrical components within an enclosed cavity, through-wafer electrical connections would be an ideal solution to supply power to the electrical components. In this report, a novel way of creating a through-wafer electrical connection by creating a through-silicon wafer via and threading a gold wire with a diameter of 25.4µm through followed by soldering to bond pads is investigated. This report will be discussing about the process parameters used to create through-silicon wafer vias ranging from 25µm to 800µm in diameter by Deep Reactive Ion Etching (DRIE). Also discussed, will be the photolithography process to create the patterns on the silicon wafer required for the DRIE process and the gold deposition process to create the bond pads.