Design, simulation and fabrication of silicon carbide metal semiconductor field effect transistors

Design, simulation and fabrication of silicon carbide metal semiconductor field effect transistors

SiC MESFETs have been designed, simulated, fabricated and characterized for high power, high frequency and high temperature applications due to the excellent electronic and physical properties of SiC, such as wide band gap, high breakdown electric field strength, large electron saturation velocity a...

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Main Author: Zhu, Chunlin
Other Authors: Rusli
Format: Theses and Dissertations
Published: 2008
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Online Access:https://hdl.handle.net/10356/4072
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Institution: Nanyang Technological University
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spelling sg-ntu-dr.10356-40722023-07-04T16:43:41Z Design, simulation and fabrication of silicon carbide metal semiconductor field effect transistors Zhu, Chunlin Rusli School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Semiconductors SiC MESFETs have been designed, simulated, fabricated and characterized for high power, high frequency and high temperature applications due to the excellent electronic and physical properties of SiC, such as wide band gap, high breakdown electric field strength, large electron saturation velocity and high thermal conductivity. DOCTOR OF PHILOSOPHY (EEE) 2008-09-17T09:43:49Z 2008-09-17T09:43:49Z 2007 2007 Thesis Zhu, C. (2007). Design, simulation and fabrication of silicon carbide metal semiconductor field effect transistors. Doctoral thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/4072 10.32657/10356/4072 Nanyang Technological University application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
topic DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Zhu, Chunlin
Design, simulation and fabrication of silicon carbide metal semiconductor field effect transistors
description SiC MESFETs have been designed, simulated, fabricated and characterized for high power, high frequency and high temperature applications due to the excellent electronic and physical properties of SiC, such as wide band gap, high breakdown electric field strength, large electron saturation velocity and high thermal conductivity.
author2 Rusli
author_facet Rusli
Zhu, Chunlin
format Theses and Dissertations
author Zhu, Chunlin
author_sort Zhu, Chunlin
title Design, simulation and fabrication of silicon carbide metal semiconductor field effect transistors
title_short Design, simulation and fabrication of silicon carbide metal semiconductor field effect transistors
title_full Design, simulation and fabrication of silicon carbide metal semiconductor field effect transistors
title_fullStr Design, simulation and fabrication of silicon carbide metal semiconductor field effect transistors
title_full_unstemmed Design, simulation and fabrication of silicon carbide metal semiconductor field effect transistors
title_sort design, simulation and fabrication of silicon carbide metal semiconductor field effect transistors
publishDate 2008
url https://hdl.handle.net/10356/4072
_version_ 1772825250085470208

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