Simulation and characterization of the inductive-coupled plasma chemical vapour deposition of nano-sized materials

The details of Inductively Coupled Plasma and Chemical Vapor Deposition and their integration is given. The details of PIC simulation are discussed. The results of characterization of the films formed making use of the optimum parameters is also discussed.

Saved in:

Bibliographic Details
Main Author:	Asutosh Srivastava.
Other Authors:	Tan, Ooi Kiang
Format:	Theses and Dissertations
Published:	2008
Subjects:	DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
Online Access:	http://hdl.handle.net/10356/4312
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	Nanyang Technological University

id	sg-ntu-dr.10356-4312
record_format	dspace
spelling	sg-ntu-dr.10356-43122023-07-04T15:58:00Z Simulation and characterization of the inductive-coupled plasma chemical vapour deposition of nano-sized materials Asutosh Srivastava. Tan, Ooi Kiang School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics The details of Inductively Coupled Plasma and Chemical Vapor Deposition and their integration is given. The details of PIC simulation are discussed. The results of characterization of the films formed making use of the optimum parameters is also discussed. Master of Engineering 2008-09-17T09:49:03Z 2008-09-17T09:49:03Z 2004 2004 Thesis http://hdl.handle.net/10356/4312 Nanyang Technological University application/pdf
institution	Nanyang Technological University
building	NTU Library
continent	Asia
country	Singapore Singapore
content_provider	NTU Library
collection	DR-NTU
topic	DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
spellingShingle	DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics Asutosh Srivastava. Simulation and characterization of the inductive-coupled plasma chemical vapour deposition of nano-sized materials
description	The details of Inductively Coupled Plasma and Chemical Vapor Deposition and their integration is given. The details of PIC simulation are discussed. The results of characterization of the films formed making use of the optimum parameters is also discussed.
author2	Tan, Ooi Kiang
author_facet	Tan, Ooi Kiang Asutosh Srivastava.
format	Theses and Dissertations
author	Asutosh Srivastava.
author_sort	Asutosh Srivastava.
title	Simulation and characterization of the inductive-coupled plasma chemical vapour deposition of nano-sized materials
title_short	Simulation and characterization of the inductive-coupled plasma chemical vapour deposition of nano-sized materials
title_full	Simulation and characterization of the inductive-coupled plasma chemical vapour deposition of nano-sized materials
title_fullStr	Simulation and characterization of the inductive-coupled plasma chemical vapour deposition of nano-sized materials
title_full_unstemmed	Simulation and characterization of the inductive-coupled plasma chemical vapour deposition of nano-sized materials
title_sort	simulation and characterization of the inductive-coupled plasma chemical vapour deposition of nano-sized materials
publishDate	2008
url	http://hdl.handle.net/10356/4312
_version_	1772826323278888960

Simulation and characterization of the inductive-coupled plasma chemical vapour deposition of nano-sized materials

Similar Items