Negative-bias temperature instability (NBTI) characterization of MOSFETS employing decoupled-plasma-nitrided gate oxides

• المؤلف الرئيسي: Lai, Simon Chung Sing
• مؤلفون آخرون: Ang Diing Shenp
• التنسيق: Theses and Dissertations
• اللغة: English
• منشور في: 2011
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/43995
• المؤسسة: Nanyang Technological University

The power-law time exponent n of negative-bias temperature instability (NBTI) is perceived to be able to explain the underlying physical mechanism. At present, molecular hydrogen is hypothesized as the diffusing specie, as it is able to reconcile the theoretical value of 0.167 with the experimental...