Design of low cost RFID tag on high resistivity silicon substrate
Reviews the RFID tag technology and requirements for low cost Schottky diode technology. SiGe Schottky diode has the potential to replace normal semiconductor like Si and III-V materials to form Schottky contact with low turn-on voltage.
Saved in:
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Theses and Dissertations |
| Published: |
2008
|
| Subjects: | |
| Online Access: | http://hdl.handle.net/10356/4440 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Institution: | Nanyang Technological University |
| Summary: | Reviews the RFID tag technology and requirements for low cost Schottky diode technology. SiGe Schottky diode has the potential to replace normal semiconductor like Si and III-V materials to form Schottky contact with low turn-on voltage. |
|---|