Design of low cost RFID tag on high resistivity silicon substrate
Reviews the RFID tag technology and requirements for low cost Schottky diode technology. SiGe Schottky diode has the potential to replace normal semiconductor like Si and III-V materials to form Schottky contact with low turn-on voltage.
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2008
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sg-ntu-dr.10356-44402023-07-04T15:16:33Z Design of low cost RFID tag on high resistivity silicon substrate Jiang, Qianshao Tse, Man Siu School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Wireless communication systems Reviews the RFID tag technology and requirements for low cost Schottky diode technology. SiGe Schottky diode has the potential to replace normal semiconductor like Si and III-V materials to form Schottky contact with low turn-on voltage. Master of Science (Microelectronics) 2008-09-17T09:51:30Z 2008-09-17T09:51:30Z 2004 2004 Thesis http://hdl.handle.net/10356/4440 Nanyang Technological University application/pdf |
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DRNTU::Engineering::Electrical and electronic engineering::Wireless communication systems Jiang, Qianshao Design of low cost RFID tag on high resistivity silicon substrate |
description |
Reviews the RFID tag technology and requirements for low cost Schottky diode technology. SiGe Schottky diode has the potential to replace normal semiconductor like Si and III-V materials to form Schottky contact with low turn-on voltage. |
author2 |
Tse, Man Siu |
author_facet |
Tse, Man Siu Jiang, Qianshao |
format |
Theses and Dissertations |
author |
Jiang, Qianshao |
author_sort |
Jiang, Qianshao |
title |
Design of low cost RFID tag on high resistivity silicon substrate |
title_short |
Design of low cost RFID tag on high resistivity silicon substrate |
title_full |
Design of low cost RFID tag on high resistivity silicon substrate |
title_fullStr |
Design of low cost RFID tag on high resistivity silicon substrate |
title_full_unstemmed |
Design of low cost RFID tag on high resistivity silicon substrate |
title_sort |
design of low cost rfid tag on high resistivity silicon substrate |
publishDate |
2008 |
url |
http://hdl.handle.net/10356/4440 |
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1772828931461742592 |